Non volatile semiconductor memory device and manufacturing method thereof

摘要

In accordance with an embodiment, a non volatile semiconductor memory device includes a substrate, a first electrode, a functional film, and a second electrode. The first electrode is provided on the substrate. The functional film is located on the first electrode and serves as a storage medium. The second electrode is provided on the functional film or in the functional film, and has a convex curved upper surface.

主权项

1. A non volatile semiconductor memory device comprising:
a substrate; a first electrode on the substrate; a functional film as a storage medium on the first electrode; and a second electrode on or in the functional film, the second electrode having a convex curved upper surface; wherein the functional film and the second electrode are made of a combination of a metal having low resistance to oxidization and a metal having high resistance to oxidization.