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1. A gate driving circuit for driving an insulated gate switching element, comprising:
a gate charging circuit configured to charge gate capacitance of the insulated gate switching element, the gate charging circuit including
a first p-channel metal oxide semiconductor field effect transistor (MOSFET), anda second p-channel MOSFET having a source thereof connected in series with a drain of the first p-channel MOSFET and constituting a first same-type normally-on enhancement MOSFET insertion (NOEMI) circuit; and a gate discharging circuit, connected in series with the gate charging circuit, configured to discharge a charge of the gate capacitance, the gate discharging circuit including
a first n-channel MOSFET, anda second n-channel MOSFET having a source thereof connected in series with a drain of the first re-channel MOSFET and constituting a second same-type NOEMI circuit, wherein a drain of the second n-channel MOSFET is connected in series with a drain of the second p-channel MOSFET, a source of the first p-channel MOSFET is connected to a first terminal, a source of the first n-channel MOSFET is connected to a second terminal, a gate of the second p-channel MOSFET is connected to the second terminal, a gate of the second n-channel MOSFET is connected to the first terminal, a gate of the first p-channel MOSFET and a gate of the first n-channel MOSFET are connected to each other, a connection point of the gate of the first p-channel MOSFET and the gate of the first n-channel MOSFET is connected to an input terminal, and a connection point of the drain of the second p-channel MOSFET and the drain of the second n-channel MOSFET is connected to an output terminal.
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