Plasma processing apparatus and plasma processing method

摘要

A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

主权项

1. A plasma processing apparatus comprising:
a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma from the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil having at least one loop and provided at a position outside the processing chamber, wherein the correction coil is not connected to the RF power supply unit nor to the RF antenna and has two open ends, wherein the correction coil is to be inductively coupled with the RF antenna by electromagnetic induction, the correction coil being configured to use the inductive coupling to locally control a plasma density distribution on the substrate in the processing chamber; a switch provided in the at least one loop of the correction coil and connected to both of the two open ends of the correction coil; and an opening/closing control circuit configured to control an effect of the correction coil on an RF magnetic field generated around the RF antenna by performing switching control of an opening state and a closing state of the switch.