发明名称 MEMS resonator and electrical device using the same
摘要 A MEMS resonator includes a beam oscillator that oscillates mechanically when an electrostatic force is applied. A supporter oscillates along with the oscillator and supports the oscillator; and at least one electrode includes an opposing face to the oscillator across a gap, wherein an electric current generated by the oscillation of the oscillator is output through an output terminal connected with the oscillator or electrode. The oscillator oscillates in a torsional resonance mode with a center being a longitudinal axis of the oscillator, and opposing faces of the oscillator and the electrode are made of semiconductors of which the conductive types are different from each other. Additionally, a surface part of the oscillator including the opposing face is doped with an impurity at a higher density than other part of the oscillator.
申请公布号 US8742860(B2) 申请公布日期 2014.06.03
申请号 US201213562678 申请日期 2012.07.31
申请人 Panasonic Corporation 发明人 Naito Yasuyuki
分类号 H03B5/30 主分类号 H03B5/30
代理机构 代理人
主权项 1. A Microelectromechanical system (MEMS) resonator comprising: a beam oscillator that oscillates mechanically when an electrostatic force is applied; a supporter that moveably supports the oscillator; and at least one electrode that includes an opposing face to the oscillator across a gap, wherein one of the oscillator and electrode is an input electrode and the other is an output electrode, the oscillator is excited by the electrostatic force caused by an AC signal that is applied through an input terminal connected with the input electrode, and an electric current generated by the oscillation of the oscillator is output through an output terminal connected with the output electrode, the oscillator oscillates in a torsional resonance mode with a center being a longitudinal axis of the beam oscillator, an opposing face of the oscillator and the opposing face of electrode are opposed to each other and are made of first and second impurity-doped semiconductors,respectively, and conductive types of the first impurity-doped semiconductor and the second impurity-doped semiconductor are different from each other, and a surface part of the oscillator including the opposing face to the electrode is doped with an impurity at a higher density than other part of the oscillator.
地址 Osaka JP