Stacked structure with a voltage boosting supply circuit

摘要

The interposer 30 is disposed on an upper surface of the stacked structure 24 formed by stacking a plurality of a DRAM chip 20 and a plurality of a flash memory chip 22. Thus down-size of an entire device is accomplished. A boost converter having an inductor is used as a voltage boost circuit 40. Thus down-size of the entire device is accomplished.

主权项

1. An integrated circuit device comprising:
a stacked structure formed by stacking a plurality of integrated circuit chips including a first integrated circuit chip having a first integrated circuit operated at a first voltage, wherein an interposer is disposed on an end surface of the stacked structure and has a voltage boosting supply circuit for boosting a specified voltage supplied from a power supply to the first integrated circuit chip within the stacked structure, the voltage boosting supply circuit comprises: a boost converter having an inductor connected in series between an input terminal supplied with the specified voltage and an output terminal supplying the first voltage, a rectifying element connected in series between the inductor and the output terminal and rectifying current in a direction from the input terminal to the output terminal, a switching element connected between the inductor and the rectifying element and connected in parallel with the output terminal as viewed from the inductor, a capacitor connected between the rectifying element and the output terminal and connected in parallel with the output terminal as viewed from the rectifying element, and a resistor connected between the rectifying element and the output terminal and connected in parallel with the output terminal as viewed from the rectifying element; and a switching control circuit controlling switching of the switching element.