Divider circuit and semiconductor device using the same

摘要

A semiconductor device with low power consumption and a small area is provided. By using a transistor including an oxide semiconductor for a channel as a transistor included in a flip-flop circuit, a divider circuit in which the number of transistors is small, power consumption is low, and the area is small can be achieved. By using the divider circuit, a semiconductor device which operates stably and is highly reliable can be provided.

主权项

1. A divider circuit comprising:
a flip-flop circuit including:
a first input portion configured to be supplied with a clock signal;a first output portion configured to supply a first output signal;a second output portion configured to supply an inversion signal of the first output signal;a second input portion electrically connected to the second output portion;a first transistor comprising a source and a drain, wherein one of the source and the drain is electrically connected to the second input portion, and wherein a gate of the first transistor is configured to be supplied with an inversion signal of the clock signal;a second transistor having a gate electrically connected to the other of the source and the drain of the first transistor;a third transistor having a gate electrically connected to the first input portion;a fourth transistor having a gate electrically connected to one of a source and a drain of the third transistor, wherein a channel formation region of the first transistor comprises an oxide semiconductor including indium, and wherein a channel formation region of the third transistor comprises an oxide semiconductor including indium.