Field effect transistor with gated and non-gated trenches

摘要

A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.

主权项

1. A field effect transistor (FET), comprising:
a gated trench disposed in a semiconductor region of a first conductivity type; a non-gated trench disposed in the semiconductor region; a body region of a second conductivity type disposed in the semiconductor region and adjacent the non-gated trench; a first shield electrode disposed in a bottom portion of the gated trench; a second shield electrode disposed in a bottom portion of the non-gated trench; a dielectric layer disposed in the non-gated trench; and a conductive material of the second conductivity type disposed in the non-gated trench such that the dielectric layer is disposed between the second shield electrode disposed in the non-gated trench and the conductive material, the conductive material contacting the body region adjacent the non-gated trench and contacting a sidewall of the non-gated trench.