Methods and materials for AIGS silver-containing photovoltaics

摘要

This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

主权项

1. A thin film material made by a process comprising,
(a) providing one or more AIGS, AIS or AGS polymeric precursor compounds or inks thereof; (b) providing a substrate; (c) depositing the compounds or inks onto the substrate; and (d) heating the substrate at a temperature of from about 20° C. to about 650° C. in an inert atmosphere, thereby producing a thin film material;wherein the polymeric precursor compound has the empirical formula Agu(In1-yGa y)v((S1-zSez)R)w y is from 0.001 to 0.999, z is from 0 to 1, u is from 0.5 to 1.5, v is from 0.5 to 1.5, w is from 2 to 6, and R represents R groups, of which there are w in number, which are each independently selected from the group consisting of alkyl, aryl, heteroaryl, alkenyl, amido, and silyl.