Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief

摘要

A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A notch is formed in the semiconductor wafer around each of the conductive vias. The notch around the conductive vias can be formed by wet etching, dry etching, or LDA. A first insulating layer is formed over a surface of the semiconductor wafer and conductive vias and into the notch to provide stress relief between the conductive vias and semiconductor wafer. A portion of the first insulating layer is removed to expose the conductive vias. A first conductive layer and second insulating layer can be formed around the conductive vias. A second conductive layer can be formed over the conductive vias. The notch can extend into the second insulating layer.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor die including a via formed through the semiconductor die; forming a first insulating layer in the via; forming a conductive via through the first insulating layer; forming a notch in the semiconductor die around the conductive via and extending into the first insulating layer; forming a second insulating layer over a surface of the semiconductor die and conductive via and into the notch; and removing a portion of the second insulating layer to expose the conductive via.