Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

主权项

1. A semiconductor device comprising:
an oxide semiconductor layer; a source electrode and a drain electrode connected to the oxide semiconductor layer; a gate insulating film; and a gate electrode adjacent to the oxide semiconductor layer with the gate insulating film therebetween, wherein the oxide semiconductor layer includes a nanocrystal with a size greater than or equal to 1 nm and smaller than or equal to 20 nm, and wherein a hydrogen concentration of the oxide semiconductor layer is smaller than or equal to 5×1019/cm3.