发明名称 |
Graphene transistor having air gap, hybrid transistor having the same, and methods of fabricating the same |
摘要 |
A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode. |
申请公布号 |
US8742478(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201213667097 |
申请日期 |
2012.11.02 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Chung Hyun-jong;Chung U-in;Kim Ki-nam |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
1. A graphene transistor comprising:
a gate electrode on a substrate; a gate insulating layer on the gate electrode, the gate insulating layer having a substantially flat shape; a graphene channel fixedly disposed on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source electrode and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.
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地址 |
Gyeonggi-Do KR |