Thin film transistor using an oxide semiconductor and display

摘要

A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

主权项

1. A thin film transistor comprising:
a substrate; a gate electrode; a gate insulation layer; a channel layer; a source electrode; and a drain electrode, said gate electrode, gate insulation layer, channel layer, source electrode and drain electrode being formed on said substrate, wherein said channel layer is amorphous, and the elements present in greatest amounts in said channel layer are indium, germanium, and oxygen; wherein said channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5-0.75, and wherein said thin film transistor has an S value that is less than 0.55V/dec.