METHOD OF THE INGOT GROWING AND INGOT

摘要

Provided is a method of growing an ingot. The method of growing the ingot includes melting a silicon to prepare a silicon melt solution, preparing a seed crystal having a crystal orientation [110], growing a neck part from the seed crystal, and growing an ingot having the crystal orientation [110] from the neck part. The neck part has a diameter of about 4 mm to about 8 mm.