发明名称 |
Block repair scheme |
摘要 |
Systems, memory arrays and methods (e.g., methods of block repair) are provided. One such system includes a memory array including a memory bank including a plurality of sections, wherein each of the plurality of sections includes at least one redundant row. Further embodiments provide for mapping non-redundant rows associated with a section associated with a block failure to distributed redundant rows. |
申请公布号 |
US8743650(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201113306879 |
申请日期 |
2011.11.29 |
申请人 |
Micron Technology, Inc. |
发明人 |
Nasu Takumi;Nakanishi Takuya |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
1. A memory array comprising:
a memory bank comprising a plurality of sections, wherein each of the plurality of sections comprises a plurality of blocks, redundant rows, and non-redundant rows, wherein a total number of redundant rows in the plurality of sections is equal to or greater than a number of non-redundant rows comprised in a bad section of the memory array to enable the non-redundant rows in the bad section to the redundant rows in two or more sections in the plurality of sections.
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地址 |
Boise ID US |