发明名称 Block repair scheme
摘要 Systems, memory arrays and methods (e.g., methods of block repair) are provided. One such system includes a memory array including a memory bank including a plurality of sections, wherein each of the plurality of sections includes at least one redundant row. Further embodiments provide for mapping non-redundant rows associated with a section associated with a block failure to distributed redundant rows.
申请公布号 US8743650(B2) 申请公布日期 2014.06.03
申请号 US201113306879 申请日期 2011.11.29
申请人 Micron Technology, Inc. 发明人 Nasu Takumi;Nakanishi Takuya
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
主权项 1. A memory array comprising: a memory bank comprising a plurality of sections, wherein each of the plurality of sections comprises a plurality of blocks, redundant rows, and non-redundant rows, wherein a total number of redundant rows in the plurality of sections is equal to or greater than a number of non-redundant rows comprised in a bad section of the memory array to enable the non-redundant rows in the bad section to the redundant rows in two or more sections in the plurality of sections.
地址 Boise ID US