| 发明名称 |
Field effect transistor device and fabrication |
| 摘要 |
In one aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET. |
| 申请公布号 |
US8742475(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213554294 |
申请日期 |
2012.07.20 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Guo Dechao;Han Shu-Jen;Lin Chung-Hsun;Wang Yanfeng |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor (FET) device comprising:
a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer; a second FET including a second portion of the first metal layer disposed on the dielectric layer; a boundary region separating the first FET from the second FET; and a capping layer arranged on the first FET device, the second FET device, and the boundary region.
|
| 地址 |
Armonk NY US |
