Method for fabricating a through wire interconnect (TWI) on a semiconductor substrate having a bonded connection and an encapsulating polymer layer

摘要

A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side; forming a second contact on the second end of the wire; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.

主权项

1. A method for fabricating a through wire interconnect for a semiconductor substrate having a first side, a second side, a substrate contact on the first side, and an integrated circuit in electrical communication with the substrate contact comprising:
forming a via through the semiconductor substrate from the first side to the second side; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.