| 发明名称 |
Metal interconnection structure |
| 摘要 |
A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN). |
| 申请公布号 |
US8742587(B1) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213680102 |
申请日期 |
2012.11.18 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Lin Yuh-Min;Chen Wen-Ting;Wu Yi-Yu |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A metal interconnection structure, comprising:
a substrate, wherein the substrate comprises at least a first conductive layer; and a protective layer disposed on the substrate, wherein the protective layer comprises a single-layered structure, a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer, and a material of the upper part of the protective layer comprises silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer comprises silicon carbide (SiC) or silicon carbonitride (SiCN).
|
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
