| 发明名称 |
Methods of forming a metal chalcogenide material |
| 摘要 |
Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described. |
| 申请公布号 |
US8741688(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213556751 |
申请日期 |
2012.07.24 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Quick Timothy A.;Uhlenbrock Stefan;Marsh Eugene P. |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A method of forming a metal chalcogenide material, comprising:
chemisorbing at least one metal precursor and at least one chalcogen precursor over a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium; and reacting the at least one metal precursor and the at least one chalcogen precursor to form a metal chalcogenide material over the substrate.
|
| 地址 |
Boise ID US |
