Semiconductor device and manufacturing method thereof

摘要

A semiconductor device and manufacturing method thereof capable of improving an operating speed of a MOSFET using an inexpensive structure. The method comprises the steps of forming a stress film to cover a source, drain, sidewall insulating layer and gate of the MOSFET and forming in the stress film a slit extending from the stress film surface toward the sidewall insulating layer. As a result, an effect of allowing local stress components in the stress films on the source and the drain to be relaxed by local stress components in the stress film on the gate is suppressed by the slit.

主权项

1. A method for manufacturing a semiconductor device having a MOS field-effect transistor, comprising:
forming a gate on a semiconductor substrate, forming a source and a drain in the semiconductor substrate, forming a sidewall insulating layer that has a first insulating portion formed in a first direction on the source and the drain and a second insulating portion formed in a second direction on a side wall of the gate, forming a stress film on the source, the drain, the sidewall insulating layer and the gate; and forming in the stress film a slit extending from a surface of the stress film toward the sidewall insulating layer and exposing a bend section of the sidewall insulating layer formed by the first insulating portion and the second insulating portion, wherein the stress film includes a first part and a second part separated by the slit from each other, the first part is located on the gate, and the second part is located on the source and the drain.