Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regions

摘要

Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

主权项

1. A three-dimensional semiconductor device comprising:
a substrate comprising a cell array region and a connection region; a mold structure providing gap regions; an interconnection structure comprising a plurality of interconnection patterns formed in the gap regions; a plurality of active patterns penetrating through the mold structure and are connected to the substrate; and an information storing element interposed between sidewalls of the active pattern and the interconnection pattern, wherein the mold structure comprises interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns in between the interlayer molds, and wherein the sidewall molds are formed of an insulating material having an etch selectivity with respect to the interlayer molds, wherein the information storing element extends from between the sidewalls of the active pattern and the interconnection pattern to between sidewalls of the interconnection pattern and the sidewall mold.