| 发明名称 |
Magnetic storage element and magnetic memory |
| 摘要 |
Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature. |
| 申请公布号 |
US8742519(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201113150995 |
申请日期 |
2011.06.01 |
| 申请人 |
Sony Corporation |
发明人 |
Yamane Kazutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Uchida Hiroyuki |
| 分类号 |
H01L29/82;G11C11/15 |
主分类号 |
H01L29/82 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A magnetic storage element comprising:
a reference layer configured to have a magnetization fixed in a predetermined direction; a recording layer configured to have a magnetization the direction of which changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer, wherein,
a material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.
|
| 地址 |
Tokyo JP |
