发明名称 Light emitting diode having electrode pads
摘要 Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
申请公布号 US8742449(B2) 申请公布日期 2014.06.03
申请号 US201313862713 申请日期 2013.04.15
申请人 Seoul Opto Device Co., Ltd. 发明人 Seo Won Cheol;Cho Dae Sung;Ye Kyung Hee;Kim Kyoung Wan;Yoon Yeo Jin
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项 1. A light emitting diode, comprising: a first type semiconductor layer; a plurality of second type semiconductor regions disposed on the first type semiconductor layer and spaced apart from each other; a first electrode pad electrically connected to the first type semiconductor layer; a second electrode pad electrically connected to the plurality of second type semiconductor regions; and a plurality of second extensions extending from the second electrode pad and electrically connected to the plurality of second type semiconductor regions, respectively, wherein at least a portion of the second electrode pad is disposed on a portion of the first type semiconductor layer, on which the second type semiconductor layer regions are not disposed, and wherein portions of the second electrode pad are disposed on the second type semiconductor regions, respectively.
地址 Ansan-si KR
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