发明名称 Solid-state imaging element having image signal overflow path
摘要 Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
申请公布号 US8743257(B2) 申请公布日期 2014.06.03
申请号 US201113067112 申请日期 2011.05.10
申请人 Sony Corporation 发明人 Ueno Takahisa;Yonemoto Kazuya;Suzuki Ryoji;Shiono Koichi
分类号 H04N5/335 主分类号 H04N5/335
代理机构 代理人
主权项 1. A solid-state imaging element comprising: a separating portion between a photoelectric conversion element and an area, said area being configured to receive a pixel source voltage; a transfer switch between said photoelectric conversion element and a floating diffusion, said floating diffusion being between said transfer switch and a reset switch; and a path at said separating portion, said path being configured to discharge a charge, wherein an output circuit outputs signals read into vertical signal lines in voltage mode, wherein said floating diffusion is connected to a gate of an amplifying transistor.
地址 Tokyo JP