发明名称 |
Solid-state imaging element having image signal overflow path |
摘要 |
Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows. |
申请公布号 |
US8743257(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201113067112 |
申请日期 |
2011.05.10 |
申请人 |
Sony Corporation |
发明人 |
Ueno Takahisa;Yonemoto Kazuya;Suzuki Ryoji;Shiono Koichi |
分类号 |
H04N5/335 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state imaging element comprising:
a separating portion between a photoelectric conversion element and an area, said area being configured to receive a pixel source voltage; a transfer switch between said photoelectric conversion element and a floating diffusion, said floating diffusion being between said transfer switch and a reset switch; and a path at said separating portion, said path being configured to discharge a charge, wherein an output circuit outputs signals read into vertical signal lines in voltage mode, wherein said floating diffusion is connected to a gate of an amplifying transistor.
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地址 |
Tokyo JP |