Forming metal-insulator-metal capacitors over a top metal layer

摘要

A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.

主权项

1. A method for forming a capacitor comprising:
forming a Metal-Insulator-Metal (MIM) capacitor over a top metal layer of a plurality of metal layers in a semiconductor device; conformably depositing a via-dielectric layer over the MIM capacitor and the top metal layer, wherein the via-dielectric layer comprises a planar first portion having a top surface level with a top surface of the MIM capacitor and a second portion over and vertically overlapping the MIM capacitor; and forming an Ultra-Thick Metal (UTM) layer over the dielectric layer.