| 发明名称 |
Level shift circuit |
| 摘要 |
According to one embodiment, a first CMOS inverter receives an input signal corresponding to a first power supply voltage, and is driven by a second power supply voltage which is smaller than the first power supply voltage; a second CMOS inverter is connected to a rear stage of the first CMOS inverter, and is driven by the second power supply voltage; a first driving adjustment circuit adjusts a current driving force of a low level output of the first CMOS inverter; and a second driving adjustment circuit adjusts a current driving force of a low level output of the second CMOS inverter. |
| 申请公布号 |
US8742822(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201313752501 |
申请日期 |
2013.01.29 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Yanagidaira Kosuke;Ozaki Shouichi;Kubota Kenro |
| 分类号 |
H03L5/00 |
主分类号 |
H03L5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A level shift circuit comprising:
a first CMOS inverter which receives an input signal corresponding to a first power supply voltage, and is driven by a second power supply voltage which is smaller than the first power supply voltage; a second CMOS inverter which is connected to a rear stage of the first CMOS inverter, and is driven by the second power supply voltage; a first driving adjustment circuit connected to said first CMOS inverter and the second supply voltage to adjust a current driving force of a low level output of the first CMOS inverter; and a second driving adjustment circuit connected to the second CMOS inverter to adjust a current driving force of a low level output of the second CMOS inverter responsive to said the first power supply voltage.
|
| 地址 |
Tokyo JP |
