| 摘要 |
A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrode 165 with respect to that of its source electrode 150 is 0 volts, then a depletion layer with a thickness Dc, which has been depleted entirely in the thickness direction, is formed in at least a part of the channel layer 150 due to the presence of a pn junction between a portion of its body region 130 and the channel layer 150, and another depletion layer that has a thickness Db as measured from the junction surface of the pn junction is formed in that portion of the body region 130. If the dielectric constant of the wide bandgap semiconductor is identified by ∈s, the dielectric constant and the thickness of the insulating film 160 are identified by ∈i and Di, respectively, the sum of Dc and Db is identified by Ds, and the absolute value of the turn-on voltage of the diode is identified by Vf0, then Ds<Di·∈s/(∈i(2/Vf0−1)) is satisfied. |
| 主权项 |
1. A semiconductor element including a metal-insulator-semiconductor field effect transistor, the metal-insulator-semiconductor field effect transistor comprising:
a wide-bandgap semiconductor including:
a body region of a first conductivity type;a source region of a second conductivity type, the source region contacting with at least a portion of the body region;a drift region of the second conductivity type, the drift region being isolated from the source region via that portion of the body region; anda channel layer of the second conductivity type, the channel layer contacting with the surface of that portion of the body region that is located between the source region and the drift region; an insulating film that contacts with the surface of the channel layer; a gate electrode that faces the channel layer with the insulating film interposed between them; a source electrode that contacts with the source region; and a drain electrode that is electrically connected to the drift region, wherein supposing the potential of the drain electrode with respect to the potential of the source electrode is identified by Vds, the potential of the gate electrode with respect to the potential of the source electrode is identified by Vgs, the gate threshold voltage of the metal-insulator-semiconductor field effect transistor is identified by Vth, the direction of current flowing from the drain electrode toward the source electrode is defined to be a forward direction, and the direction of current flowing from the source electrode toward the drain electrode is defined to be a reverse direction, if Vgs≧Vth, then the metal-insulator-semiconductor field effect transistor makes the drain electrode and the source electrode electrically conductive with each other via the channel layer, and if 0 volts≦Vgs<Vth, then the metal-insulator-semiconductor field effect transistor functions as a diode that makes no current flow in the forward direction but makes current flow in the reverse direction from the source electrode toward the drain electrode via the channel layer when Vds<0 volts, and if the potential Vgs of the gate electrode with respect to the potential of the source electrode is 0 volts, then a depletion layer with a thickness Dc, which has been depleted entirely in the thickness direction, is formed in at least a part of the channel layer due to the presence of a pn junction between that portion of the body region and the channel layer, and another depletion layer that has a thickness Db as measured from the junction surface of the pn junction is formed in that portion of the body region, and wherein supposing the dielectric constant of the wide bandgap semiconductor is identified by ∈S, the dielectric constant and the thickness of the insulating film are identified by ∈i and Di, respectively, the sum of Dc and Db is identified by Ds, and the absolute value of a turn-on voltage of the diode is identified by Vf0, then Ds<Di·∈s/(∈i (2/Vf0−1)) is satisfied, wherein the wide bandgap semiconductor is made of silicon carbide, and wherein supposing the dopant concentrations of the body region and the channel layer are identified by Nb and Nc, respectively, Vf0<0.5 volts, Ds<(⅔)·Di, Nb>1×1018 cm−3, and Nc>1×1018 cm−3 are satisfied.
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