发明名称 Method of ionization
摘要 A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
申请公布号 US8742373(B2) 申请公布日期 2014.06.03
申请号 US20100965419 申请日期 2010.12.10
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Radovanov Svetlana;Godet Ludovic;Hatem Christopher R.
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A method to generate ions comprising: flowing a gas into a plasma chamber; forming a plasma from said gas in said plasma chamber using at least a first power to an ion source and a second power to said ion source; generating a first ion species at said first power and a second ion species at said second power, said first ion species and said second ion species being generated from said gas, wherein Said first ion species and said second ion species are each a molecular ion larger than said gas and wherein said first ion species and said second ion species each have a different formula; and implanting said first ion species and said second ion species into a workpiece, disposed in said plasma chamber, at two different energies using at least a first bias voltage and a second bias voltage, said first bias voltage applied to said workpiece while said first ion species are being generated at said first power, said second bias voltage applied to said workpiece while said second ion species are being generated at said second power, wherein said first bias voltage is different than said second bias voltage, such that said first ion species and said second ion species implant said workpiece at two different depths.
地址 Gloucester MA US