Methods of forming self-aligned contacts for a semiconductor device

摘要

One illustrative method disclosed herein involves forming gate structures for first and second spaced-apart transistors above a semiconducting substrate, forming an etch stop layer above the substrate and the gate structures, performing at least one angled ion implant process to implant at least one etch-inhibiting species into less than an entirety of the etch stop layer, after performing at least one angled ion implant process, forming a layer of insulating material above the etch stop layer, performing at least one first etching process to define an opening in the layer of insulating material and thereby expose a portion of the etch stop layer, performing at least one etching process on the exposed portion of the etch stop layer to define a contact opening therethrough that exposes a doped region formed in the substrate, and forming a conductive contact in the opening that is conductively coupled to the doped region.

主权项

1. A method, comprising:
forming gate structures for first and second spaced-apart transistors above a semiconducting substrate; forming an etch stop layer above said substrate and said gate structures for said transistors; performing at least one angled ion implant process to implant at least one etch-inhibiting species into less than an entirety of said etch stop layer, wherein performing said at least one angled ion implant process to implant said at least one etch-inhibiting species comprises performing a first ion implant process using one of carbon or fluorine and performing a second ion implant process using the other of said carbon or fluorine; after performing said at least one angled ion implant process, forming a layer of insulating material above said etch stop layer; performing at least one first etching process to define an opening in said layer of insulating material and thereby expose a portion of said etch stop layer; performing a second etching process on said exposed portion of said etch stop layer to define a contact opening therethrough that exposes a doped region formed in said substrate; and forming a conductive contact in said opening that is conductively coupled to said doped region.