Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication

摘要

A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a first gate mask; etching a recess in at least one semiconductor layer; atomic layer depositing an oxide layer; forming a second gate mask over the oxide layer; forming a barrier layer over the oxide layer, wherein the forming of the barrier layer is before the forming of the second gate mask; plating a seed layer over the barrier layer and plating a gate over the oxide layer.