发明名称 Method and composition of a dual sensitive resist
摘要 The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.
申请公布号 US8741551(B2) 申请公布日期 2014.06.03
申请号 US201213442687 申请日期 2012.04.09
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Wu Chen-Hau;Chang Ching-Yu
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项 1. A lithography method, comprising: forming a dual sensitive resist layer on a substrate, the dual sensitive resist layer including: a polymer that turns soluble to a base solution in response to reaction with acid;a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; anda thermal sensitive component that includes a plurality of photo-quenchable-acid generators (PQ-AGs) that generate acid in response to thermal energy and are acid-quenchable in response to the radiation energy;exposing the dual sensitive resist layer to generate base and to disable acid generation in the dual sensitive resist layer within exposed regions;baking the exposed dual sensitive resist layer to generate acid within unexposed regions;neutralizing the base generated by the PQ-AGs and the acid generated by the PQ-AGs; anddeveloping the dual sensitive resist layer.
地址 Hsin-Chu TW