发明名称 |
Method and composition of a dual sensitive resist |
摘要 |
The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy. |
申请公布号 |
US8741551(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201213442687 |
申请日期 |
2012.04.09 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wu Chen-Hau;Chang Ching-Yu |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
1. A lithography method, comprising:
forming a dual sensitive resist layer on a substrate, the dual sensitive resist layer including:
a polymer that turns soluble to a base solution in response to reaction with acid;a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; anda thermal sensitive component that includes a plurality of photo-quenchable-acid generators (PQ-AGs) that generate acid in response to thermal energy and are acid-quenchable in response to the radiation energy;exposing the dual sensitive resist layer to generate base and to disable acid generation in the dual sensitive resist layer within exposed regions;baking the exposed dual sensitive resist layer to generate acid within unexposed regions;neutralizing the base generated by the PQ-AGs and the acid generated by the PQ-AGs; anddeveloping the dual sensitive resist layer.
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地址 |
Hsin-Chu TW |