Crystal film, crystal substrate, and semiconductor device

摘要

A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

主权项

1. A crystal film comprising:
a coat film within a crystal layer, a threading dislocation from within a buffer layer propagating through said crystal layer to said coat film; a space within said crystal layer, said coat film being between said space and a portion of said crystal layer, wherein said buffer layer is between said crystal layer and a growth substrate.