| 摘要 |
An improved joint surface used for directly jointing semiconductor structures. A method for directly jointing a first semiconductor structure to a second semiconductor structure comprises the following steps: at least one device structure of the first semiconductor structure is directly jointed to at least one device structure of the second semiconductor structure in a conductive material-to-conductive material direct jointing process. In some embodiments, before the jointing process, the at least one device structure of the first semiconductor structure can be allowed to protrude at a distance so as to exceed adjacent dielectric material on the first semiconductor structure. In some embodiments, one or more of a plurality of device structures can include a plurality of overall protrusions extending from a basic structure. These methods are used to manufacture a jointed semiconductor structure. |
