PHASE SHIFT MASK FOR EXTREAM ULTRA-VIOLET LITHOGRAPHY USING SINGLE-LAYERED ABSORBER THIN FILM

摘要

Disclosed is a phase shift mask for extreme ultra-violet lithography using a single-layered absorber thin film. The mask includes: a substrate; a reflective layer located on the substrate and comprises a multi-layered thin film reflecting extreme ultra-violet rays; and an absorbent layer located on the reflective layer and comprises a patterned single-layered thin film. The absorbent layer has a reflectance of 5-10% against extreme ultra-violet rays. The extreme ultra-violet rays reflected from the absorbent layer has a phase difference of 180±15° against the extreme ultra-violet rays reflected from the reflective layer. According to the phase shift mask, mask manufacturing processes are simplified, an image of high contrast can be obtained, and yields can be improved by securing high critical dimension uniformity on a narrow fine pattern.