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发明名称
非挥发性记忆体之第一层间介电堆叠
摘要
申请公布号
TWI440088
申请公布日期
2014.06.01
申请号
TW097112428
申请日期
2008.04.03
申请人
飞思卡尔半导体公司 美国
发明人
欧鲁邦米O 艾迪杜杜;克里斯多夫B 亨德里;保罗A 英格索;克雷格T 史威特
分类号
H01L21/31;H01L29/788
主分类号
H01L21/31
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
美国
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