发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 According to an embodiment, a light emitting device includes a laminate, a wavelength conversion layer, a first metal layer, and a first insulating layer. The laminate includes a first semiconductor layer, a second semiconductor layer, and a first light emitting layer installed between the first semiconductor layer and the second semiconductor layer. The wavelength conversion layer is configured to convert the wavelength of light emitted from the first light emitting layer. The first semiconductor layer is disposed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating layer is installed between a first side of the first metal layer and a first side part and between the wavelength conversion layer and the first side part.
申请公布号 KR20140066084(A) 申请公布日期 2014.05.30
申请号 KR20130104697 申请日期 2013.09.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMADA SHINJI;KATSUNO HIROSHI;MITSUGI SATOSHI;NUNOUE SHINYA
分类号 H01L33/44;H01L33/50 主分类号 H01L33/44
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