| 摘要 |
A substrate etching method comprises the following steps: a deposition operation, for depositing a polymer on a side wall of a silicon groove; an etching operation, for etching the side wall of the silicon groove; repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, the chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method can avoid the problem of damaging the side wall, thereby making the side wall smooth. |
