| 摘要 |
The present invention relates to a paper-substrate memory device and a method of manufacturing the same. In the present invention, a memory device is manufactured by using paper, which is coated with a heat-resistance material such as silicon or paper made of pulp, as a substrate. In the present invention, a metal line layer such as a gate electrode is formed on a paper substrate using a vacuum deposition method, and a ferroelectric layer made of a ferroelectric material and a channel formation layer are stacked on the metal line layer. |
