| 摘要 |
<p>The invention relates to a method and to an installation for growing epitaxial or non-epitaxial graphenes by COlaser processing the thin films of SiC/SiO. According to the invention, the method is based on the thermal decomposition of a thin layer of SiC, deposited by various methods onto a sublayer, which is irradiated for a controlled period of time, so that, after the SiC decomposition, the silicon is removed by thermal sublimation, afterwards the carbon layer is epitaxially or non-epitaxially rearranged, depending on the sublayer used. There is the possibility for the sublayer to be pre-heated, depending on the necessities, to a temperature of up to 500°C, for eliminating the thermal stresses occurred during processing, heating and cooling being very fast, the entire thermal process on the sublayer surface being monitored by a digital pyrometer, while recording the data during the process. As claimed by the invention, the installation consists of a laser source, a system for measuring the laser beam power in real time, an obturator system with preset exposure time, with the general recording of the exposure time, an assembly for conveying and processing the beam which allows the control of the surface and the exposure power density, a reaction chamber and a central unit for data management.</p> |
