发明名称 STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT-RATIO SEMICONDUCTOR DEVICE STRUCTURES
摘要 <p>Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.</p>
申请公布号 WO2014081966(A1) 申请公布日期 2014.05.30
申请号 WO2013US71314 申请日期 2013.11.21
申请人 APPLIED MATERIALS, INC. 发明人 VERHAVERBEKE, STEVEN;CHEN, HAN-WEN;GOUK, ROMAN
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址