发明名称 |
STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT-RATIO SEMICONDUCTOR DEVICE STRUCTURES |
摘要 |
<p>Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.</p> |
申请公布号 |
WO2014081966(A1) |
申请公布日期 |
2014.05.30 |
申请号 |
WO2013US71314 |
申请日期 |
2013.11.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
VERHAVERBEKE, STEVEN;CHEN, HAN-WEN;GOUK, ROMAN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|