| 摘要 |
<p>Provided is a super-junction trench MOSFET. More particularly, the super-junction trench MOSFET includes a semiconductor substrate 10; a source 11 that contacts an upper portion of the semiconductor substrate 10; a drain 12 that contacts a lower portion of the semiconductor substrate 10; and a gate 13 that is formed on an upper surface of the semiconductor substrate between the source 11 and the drain 12; a P type semiconductor region 100 that is formed on the semiconductor substrate 10; and an N type semiconductor region 200 that is formed on the semiconductor substrate 10 so as to be alternate with the P type semiconductor region 100 and has a non-uniform doping concentration of impurity.</p> |
