发明名称 METHODS OF FABRICATING SEMICONDUCTOR DEVICE AND RELATED DEVICE
摘要 <p>A method for fabricating a semiconductor device and a related device comprises preparing a semiconductor substrate having a cell gate pattern on a cell area and a peripheral gate pattern on a peripheral area; forming a photosensitive pattern for exclusively exposing the peripheral area of the semiconductor substrate; forming an LDD area in the peripheral area; forming a sacrificial spacer on sides of the peripheral gate pattern and the photosensitive pattern through a low temperature ALD process; forming a source/drain area in the peripheral area; and removing the sacrificial spacer and the photosensitive pattern.</p>
申请公布号 KR20140065638(A) 申请公布日期 2014.05.30
申请号 KR20120130948 申请日期 2012.11.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DONG HYUN;PARK, WON KYUNG;SON, SEUNG HUN;SONG, HYUN SEUNG;LIM, JUN HEE;HAN, JOON;HUH, KI JAE
分类号 H01L21/336;H01L21/265;H01L29/78 主分类号 H01L21/336
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