METHODS OF FABRICATING SEMICONDUCTOR DEVICE AND RELATED DEVICE
摘要
<p>A method for fabricating a semiconductor device and a related device comprises preparing a semiconductor substrate having a cell gate pattern on a cell area and a peripheral gate pattern on a peripheral area; forming a photosensitive pattern for exclusively exposing the peripheral area of the semiconductor substrate; forming an LDD area in the peripheral area; forming a sacrificial spacer on sides of the peripheral gate pattern and the photosensitive pattern through a low temperature ALD process; forming a source/drain area in the peripheral area; and removing the sacrificial spacer and the photosensitive pattern.</p>
申请公布号
KR20140065638(A)
申请公布日期
2014.05.30
申请号
KR20120130948
申请日期
2012.11.19
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, DONG HYUN;PARK, WON KYUNG;SON, SEUNG HUN;SONG, HYUN SEUNG;LIM, JUN HEE;HAN, JOON;HUH, KI JAE