发明名称 USE OF INVERSE QUASI-EPITAXY TO MODIFY ORDER DURING POST-DEPOSITION PROCESSING OR ORGANIC PHOTOVOLTAICS
摘要 Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.
申请公布号 WO2014082002(A2) 申请公布日期 2014.05.30
申请号 WO2013US71451 申请日期 2013.11.22
申请人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 FORREST, STEPHEN, R.;ZIMMERMAN, JERAMY, D.;LASSITER, BRIAN, E.;XIAO, XIN
分类号 H01L51/42;H01L51/46 主分类号 H01L51/42
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