发明名称 SUBSTRATE FOR MOUNTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAID SUBSTRATE
摘要 <p>Provided is a substrate for mounting a semiconductor element, said substrate having improved adhesion between an electrode layer and a resin due to said electrode layer having a roughened surface and a cross-section shaped substantially like an inverted trapezoid. Also provided is a method for manufacturing said substrate, said method being characterized by containing the following steps, in this order: a) a step in which a two-layer resist layer consisting of a bottom resist layer and a top resist layer is formed, from resists having different main photosensitivity wavelengths, on the surface of a metal plate; b) a step in which, with the bottom resist layer unexposed, the top resist layer is exposed using a prescribed pattern; c) a developing step in which a prescribed pattern of openings is formed in the top resist layer and openings are also formed in the unexposed bottom resist layer, thereby partially revealing the surface of the metal plate; d) a step in which the bottom resist layer is exposed and thereby cured; e) a step in which a plating layer is formed on the parts of the metal-plate surface revealed by the bottom resist layer; f) a step in which the surface of said plating layer is roughened by an etching treatment; g) a step in which the resulting roughened surface is plated with a noble metal for bonding purposes; and h) a step in which both resist layers are removed.</p>
申请公布号 WO2014080746(A1) 申请公布日期 2014.05.30
申请号 WO2013JP79766 申请日期 2013.11.01
申请人 SH MATERIALS CO., LTD. 发明人 HOSOMOMI SHIGERU
分类号 H01L23/12 主分类号 H01L23/12
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