ETCHING COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

摘要

Provided are an etching composition, and a method for manufacturing a semiconductor device using the same. The etching composition comprises 1-7 wt% of hydrogen peroxide, 20-80 wt% of phosphoric acid, 0.001-1 wt% of amine or amide polymer, 0-55 wt% of sulfuric acid, and 10-45 wt% of deionized water. The etching composition is used for etching a metal film. The method for manufacturing a semiconductor device comprises: a step for forming a first metal film on a substrate; a step for forming a second metal film on the first metal film; a step for polishing the first and second metal films; and a step for cleaning the first and second metal films by using a cleaning solution which consists of the etching composition.