CAPACITOR USING MIDDLE OF LINE (MOL) CONDUCTIVE LAYERS

摘要

A method for fabricating a metal-insulator-metal (MIM) capacito includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor substrate. The first MOL conductive layer provides a first plate (330) of the MIM capacitor as well as a first set of local interconnects (120-1...4) to source and drain regions (104, 106) of a semiconductor device. The method also includes depositing an insulator layer (340) on the first MOL conductive layer as a dielectric layer of the MIM capacitor. The method further includes depositing a second MOL conductive layer (350) on the insulator layer as a second plate of the MIM capacitor.