| 摘要 |
A semiconductor memory device comprises a first bank, a second bank, a third bank, a fourth bank; a first data driving unit for generating first bank backup data by amplifying and sensing data outputted from the first bank, for driving the first bank backup data, and for transmitting the first bank backup data to a second data driving unit in response to a first bank selection signal by driving the first bank backup data; a second data driving unit for generating second bank backup data by amplifying and sensing data outputted from the second bank, for driving the second bank backup data, and for transmitting the second bank backup data to the first data driving unit in response to a second bank selection signal; a third data driving unit for amplifying and sensing data outputted from the third bank; a fourth data driving unit for amplifying and sensing data outputted from the fourth bank; and a data conversion unit for outputting serial data by converting data driven in the first to the fourth data driving unit. |
