<p>The present invention relates to a method for patterning graphene, and more specifically, to a method for patterning graphene comprising the steps of forming an oxide layer on a substrate; forming metal patterns on the oxide layer; transferring graphene onto the oxide layer and the metal patterns; and forming graphene patterns by removing graphene from the metal patterns by applying heat to the graphene and vaporizing the graphene.</p>
申请公布号
KR101400723(B1)
申请公布日期
2014.05.30
申请号
KR20130021855
申请日期
2013.02.28
申请人
POSTECH ACADEMY-INDUSTRY FOUNDATION;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人
YEOM, GEUN YOUNG;LHM, KYU WOOK;LIM, JONG TAE;LEE, KYOUNG JAE;JEONG, SUK MIN;KANG, TAE HEE;PARK, JIN WOO;OH, JONG SIK;KIM, SUNG HEE;YANG, MI HYUN