AMPLIFIED DETECTOR FORMED BY LOW TEMPERATURE DIRECT WAFER BONDING

摘要

In one embodiment the invention relates to a photodetector device sensitive for wavelengths comprising a doped Ge absorbing material bonded to a substrate material locally of opposite doping polarity and an interface layer formed between the Ge absorbing material and the substrate material to form a p-n junction. In one embodiment the bonded material comprises a p-doped Ge wafer and n-doped Si or So I wafer and obtained from a low-temperature heat treatment after bonding. The invention also discloses a process for making a photodetector.