发明名称 MEMORY WITH MULTIPLE SELECTABLE SPECIFICATION GRADES AND OPERATING METHOD THEREOF
摘要 <p>The present invention relates to a memory and operating method thereof, the memory can be selected more than one standard specification grade. The memory includes a plurality of storage bit units to store bits and some control units corresponding to the stored bits, and bit line WL control units which can store bits and a selector unit to control different grades of the memory. The selector unit to control different grades of the memory outputs selector signal to choose memory with different grades. The bit line WL control units storing bits control the bit line WL required for different specification grades according to the received signal of the selector unit with the same specification grade of the memory. To achieve the selection of different specification grades memory one corresponding WL bit line can be controlled at one time, or two corresponding WL bit lines can be controlled at the same time; or multiple corresponding WL bit lines can be controlled at the same time. The memory with compact structure can reduce the time of the product to the market, and reduce the cost of the chip for a wide application scope.</p>
申请公布号 WO2014079176(A1) 申请公布日期 2014.05.30
申请号 WO2013CN72037 申请日期 2013.03.01
申请人 WUXI ADVANCE SUNRISE CO., LTD 发明人 FANG, YINGJIAO
分类号 G11C16/06 主分类号 G11C16/06
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