| 摘要 |
<p>This solar cell (10) includes a first electrode layer (12), a second electrode layer (15), a p-type semiconductor layer (13) disposed between the electrode layers, and an n-type semiconductor layer (14) disposed between the p-type semiconductor layer (13) and the second electrode layer (15). The p-type semiconductor layer (13) includes a group 11 element, a group 13 element, and a group 16 element, and comprises a compound semiconductor having a chalcopyrite structure. The p-type semiconductor layer (13) includes In and Ga as group 13 elements. The thickness of the p-type semiconductor layer (13) is in the range of 0.5-0.7 µm. The Ga/(Ga+In) ratio in the p-type semiconductor layer (13) increases toward the electrode layer (12) from the n-type semiconductor layer (14). The Ga/(Ga+In) ratio in the principal surface of the n-type semiconductor layer (14) is in the range of 0.225-0.325. The Ga/(Ga+In) ratio in the principal surface of the electrode layer (12) is in the range of 0.375-0.542.</p> |
